aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet 700v@150 i d (atv gs =10v) 1.3a r ds(on) (atv gs =10v) <9 w g symbol theaod1n60&AOU1N60&aoi1n60havebeen fabricatedusinganadvancedhighvoltagemosfet processthatisdesignedtodeliverhighlevelsof performanceandrobustnessinpopularacdc applications. byprovidinglowr ds(on) ,c iss andc rss alongwith guaranteedavalanchecapabilitythesepartscanbe adoptedquicklyintonewandexistingofflinepower supply designs. v ds units parameter absolute maximum ratings t a =25c unless otherwise noted maximum g d s v ds v gs i dm i ar e ar e as peakdioderecoverydv/dt dv/dt t j ,t stg t l symbol r q ja r q cs r q jc maximumcasetosink a maximumjunctiontocase d,f c/w c/w 2.3 0.5 2.8 mj avalanchecurrent c 15 repetitiveavalancheenergy c derateabove25 o c 45 0.36 a 1 singlepulsedavalancheenergy h 30 mj v/ns 5 v drainsourcevoltage 600 v 30 gatesourcevoltage t c =100c a i d t c =25c 1.3 0.8 4 pulseddraincurrent c continuousdrain current b junctionandstoragetemperaturerange 50to150 c powerdissipation b p d maximumjunctiontoambient a,g t c =25c 55 maximum thermal characteristics units c/w 45 parameter typical w w/ o c maximumleadtemperatureforsoldering purpose,1/8"fromcasefor5seconds 300 c www.freescale.net.cn 1/6 general description features
symbol min typ max units 600 700 bv dss /?tj 0.6 v/ o c 1 10 i gss gatebodyleakagecurrent 100 n a v gs(th) gatethresholdvoltage 3 4.1 4.5 v r ds(on) 7.5 9 w g fs 0.9 s v sd 0.65 1 v i s maximumbodydiodecontinuouscurrent 1 a i sm 4 a c iss 105 130 160 pf c oss 12 14.5 18 pf c rss 1.5 1.8 2.2 pf r g 2.9 3.5 5.3 w q g 6.1 8 nc q gs 1.3 2 nc q gd 3.1 4 nc t d(on) 10 13 ns t r 6.7 13 ns t d(off) 20 26 ns m a v staticdrainsourceonresistance v gs =10v,i d =0.65a reversetransfercapacitance v gs =0v,v ds =25v,f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions zerogatevoltagedraincurrent id=250a,vgs=0v bv dss i dss zerogatevoltagedraincurrent v ds =600v,v gs =0v gatedraincharge v ds =5v,i d =250 m a v ds =480v,t j =125c i s =1a,v gs =0v v ds =40v,i d =0.65a forwardtransconductance maximumbodydiodepulsedcurrent inputcapacitance outputcapacitance dynamic parameters turnonrisetime turnoffdelaytime v gs =10v,v ds =300v,i d =1a, r g =25 w gateresistance v gs =0v,v ds =0v,f=1mhz totalgatecharge v gs =10v,v ds =480v,i d =1a turnondelaytime gatesourcecharge drainsourcebreakdownvoltage i d =250a,v gs =0v,t j =25c i d =250a,v gs =0v,t j =150c diodeforwardvoltage v ds =0v,v gs =30v t d(off) 20 26 ns t f 11.5 23 ns t rr 114 137 ns q rr 0.63 0.76 m c bodydiodereverserecoverytime i f =1.3a,di/dt=100a/ m s,v ds =100v bodydiodereverserecoverycharge i f =1.3a,di/dt=100a/ m s,v ds =100v turnoffdelaytime g turnofffalltime a.thevalueofr q ja ismeasuredwiththedeviceinastillairenvironm entwitht a =25 c. b.thepowerdissipationp d isbasedont j(max) =150 cinato252package,usingjunctiontocasetherm alresistance,andismoreusefulin settingtheupperdissipationlimitforcaseswhere additionalheatsinkingisused. c.repetitiverating,pulsewidthlimitedbyjuncti ontemperaturet j(max) =150 c. d.ther q ja isthesumofthethermalimpedancefromjunctiont ocaser q jc andcasetoambient. e.thestaticcharacteristicsinfigures1to6are obtainedusing<300 m spulses,dutycycle0.5%max. f.thesecurvesarebasedonthejunctiontocaset hermalimpedancewhichismeasuredwiththedevice mountedtoalargeheatsink,assuminga maximumjunctiontemperatureoft j(max) =150 c. g.thesetestsareperformedwiththedevicemounted on1in 2 fr4boardwith2oz.copper,inastillairenviron mentwitht a =25 c. h.l=60mh,i as =1a,v dd =150v,r g =10 ? ,startingt j =25 c www.freescale.net.cn 2/6 aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet
typical electrical and thermal characteristics 0 0.5 1 1.5 2 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5.5v 6v 10v 6.5v 0.1 1 10 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics 55 c v ds =40v 25 c 125 c 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 0 0.5 1 1.5 2 2.5 r ds(on) ( w w w w ) i d (a) figure 3: on - resistance vs. drain current and gate v gs =10v 0 0.5 1 1.5 2 2.5 100 50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v i d =0.5a 40 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c i d =30a 25 125 figure 3: on - resistance vs. drain current and gate voltage 0.8 0.9 1 1.1 1.2 100 50 0 50 100 150 200 bv dss (normalized) t j ( o c) figure 5: break down vs. junction temperature www.freescale.net.cn 3/6 aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =480v i d =1a 1 10 100 1000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0 200 400 600 800 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) t j(max) =150 c t c =25 c operating area (note f) case (note f) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q q q q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.8c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 4/6 aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet
typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (c) figure 12: power de-rating (note b) 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 13: current de-rating (note b) 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) t j(max) =150 c t a =25 c pulse width (s) figure 14: single pulse power rating junction-to-am bient (note g) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q q q q ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note g) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55 c/w indescendingorder d=0.5,0.3,0.1,0.05,0.02,0.01,singlepulse singlepulse t on t p d www.freescale.net.cn 5/6 aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet
+ vdc ig vds dut + vdc vgs vgs 10v qg qgs qgd charge gatechargetestcircuit&waveform + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istiveswitchingtestcircuit&waveforms t t r d(on) t on t d(off) t f t off l bv unclampedinductiveswitching(uis)testcircuit& waveforms vds 2 e=1/2li ar ar vdd vgs id vgs rg dut + vdc vgs vds id vgs bv i ig vgs + vdc dut l vds vgs vds isd isd dioderecoverytestcircuit&waveforms vds vds+ i f ar dss e=1/2li di/dt i rm rr vdd vdd q=idt t rr ar ar www.freescale.net.cn 6/6 aod1n60/AOU1N60/aoi1n60 600v,1.3a n-channel mosfet
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